Abstract
p -type modulation doping in the range of 0–100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash.
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