Abstract
The impact of oxygen vacancies on the oxygen electrode reaction has been investigated on anodic titanium oxide (n- type semi-conductor). The anodic oxide films of various oxygen vacancy concentrations at constant film thickness were used as substrates for ascertaining relationships between the oxygen electrode reactions rates and donor (oxygen vacancy) density. The data were analyzed in terms of a model that delineates the roles played by oxygen vacancies in the bulk and at the surface. The results suggest that oxygen vacancies are involved catalytically in the oxygen electrode reaction. Possible mechanisms are postulated to account for the catalytic involvement of the vacancies.
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