Abstract
The effect of ion incident angle on multiple-bit upset (MBU) has been investigated for static random access memory IDT71256. The test pattern dependent MBU ratio can be as high as 70% when tested by either normal incident 136Xe ions or 36Ar ions incident at large angles. The increase of single event upset cross-section at large angles for light ions are mainly due to occurrence of high-ratio MBU. Charges collected through funnel effect play an important role in inducing MBU in NMOS IDT71256. The MBU ratio is in proportional to energy deposited in whole sensitive layer, but the ratios of more than 2-bit upset is decided by lateral distribution of charges.
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