Abstract
During the tailing current period when the bipolar device is turned off, plasma extraction transit time (PETT) oscillation will occur, and the electromagnetic interference caused by it will have a negative effect on the driver circuit and the surrounding electronic components. Therefore, it is necessary to investigate the factors that affect the characteristics of PETT oscillation. In this paper, the relationship between the characteristics of PETT oscillation and the operation conditions of high-voltage insulated gate bipolar transistor (IGBT) device is studied experimentally. When the DC link voltage, load current and gate driver resistance are changed, and the peak value and duration of PETT oscillation under different operation conditions are recorded. The results show that the PETT oscillation characteristics have a strong dependence on the voltage and current of IGBT device, as well as the gate driver resistance. The experimental results in this paper can provide the guidance for suppressing the PETT oscillation of high-voltage IGBT devices.
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