Abstract
The formation of higher-k phase HfO2 is challenging and attractive. In this study, the phase transition of pure HfO2 thin films was induced by swift heavy ions (SHIs) irradiation. The amorphous HfO2 films crystallized after SHIs irradiation and undergone a transformation of monoclinic to cubic/tetragonal phase with the increase of the ion fluences. The as-deposited HfO2 films take on nonstoichiometric state, and became close to the stoichiometric one under SHIs irradiation. This work provides an approach to stabilize the higher-k phase HfO2 and optimize the interface between HfO2 and Si by SHIs irradiation.
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