Abstract

A series of Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ was prepared using a solid-state method, and the phosphor emitted white light by tuning the ratio of Dy3+ /Eu3+ . The effects of La3+ /Lu3+ on the structure and luminescence properties of Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ were explored. Under the influence of bond length and twist, the luminescence intensity of the materials increased first and then decreased under excitation with ultraviolet light. The lattice distortion of the trivalent cation La3+ -substituted Mg2 Y2 Al2 Si2 O12 :Dy3+ and Eu3+ phosphors was reduced, the symmetry of polyhedron occupied by the luminescence centre improved, and the thermal stability of the luminescence centre improved to a certain extent. White light emitting diodes (LEDs) were fabricated by combining a 370 nm LED chip and the Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,La3+ (Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,Lu3+ ) phosphor. The results showed that Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,La3+ /Lu3+ may have potential application in the area of white LEDs.

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