Abstract
The high temperature defect equilibria of CdSe have been investigated by measuring the electrical transport properties as a function of component pressure and temperature under equilibrium conditions. Measurements were performed on undoped, Cu- and In-doped single crystals. The electron concentration for undoped CdSe varies as n∞P Cd 1 3 at temperatures between 650 and 850°C and in Cd-rich vapor. A dominant doubly ionized native donor, either a Cd interstitial or Se vacancy, is proposed to explain this behavior with an incorporation energy for this defect of 1.90 eV. A lower value for the Cd pressure exponent is observed for In- and Cu-doped CdSe, and also for undoped CdSe at lower temperatures. It is proposed that these doping elements behave as donors under the experimental conditions and that residual donor impurities exist in the undoped CdSe. Measurements of the Hall mobility of the charge carriers and the relaxation time for the conductivity change are also reported and compared with theory.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
