Abstract
CdSe single crystals grown by the Prior method were treated in a broad range of Cd or Se vapor pressures and quenched to room temperature. The Hall coefficients and electrical resistivities of specimens were determined between room temperature and liquid nitrogen temperature. Effect of thermal treatment in metal or chalcogen vapor on electrical properties of CdSe was examined as a function of the vapor pressure. The result shows that electron concentration of CdSe prepared from 6-nine Cd and 5-nine Se does not depend on Cd vapor pressure but, it seems to depend on Se vapor pressure. On the contrary, electron concentration of CdSe prepared from 5-nine Cd and Se seems to vary as PCd1/3. Dependence of resistivity on PCd and PSe2 is also reported.
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