Abstract
The dependences of the longitudinal magnetoresistance (Δρzz/ρ0)(P), transverse magnetoresistance (Δρxx/ρ0)(P), and magnetic susceptibility (χ/χ0(P)) on hydrostatic pressure P ≤ 7 GPa in the ferromagnetic semiconductor Cd0.7Mn0.3GeAs2 at room temperature were investigated.
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Schedule a callMore From: Bulletin of The Russian Academy of Sciences: Physics
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