Abstract
The high-power up to 1 W characteristics of a capacitive microwave power sensor with grounded microelectromechanical systems beam is first investigated, in this letter. The device has been fabricated using GaAs MMIC processes. The experiment results indicate that the sensitivity of this power sensor degenerates gradually, as input microwave power increase slowly. The measurement results are divided into three regions: 1) linear region; 2) transitional region; and 3) saturated region, and the corresponding sensitivities are 2.86, 2.18, and 1.68 fF/W at 10 GHz, respectively. This effect results from the impedance mismatch of the device at high power, and the relevant modified formula is given.
Published Version
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