The growth technology for 300 mm single crystal silicon

Abstract

The fabrication technique for 300 mm silicon single crystals and wafers is the central topic of silicon material research recently. The study on the growth technique of 300 mm silicon ingots has been developed in our institute since 1997. The research mainly focuses on the following aspects: (1) process conditions for fabrication of the dislocation-free silicon single crystal; (2) oxygen content in the silicon crystals; (3) elimination of oxidation-induced stacking faults (OSF) ring in the crystal. It is found that the hot zone configuration, parameters of growth process, magnetic field, heat shield and so on have an important effect on the perfection of crystals and the impurity concentration in the obtained crystals. The 300 mm silicon ingots can be obtained repeatedly. The impurities in the crystals can be effectively controlled. Effect of cusp magnetic field on the crystal growth has been investigated. The role of heat shield in hot zone has also been discussed.