Abstract
Nickel oxide (NiOX), widely used as ion storage layer in all thin film electrochromic devices (ATF-ECDs), was deposited by reactive direct current (DC) magnetron sputtering at different oxygen fluxes (FO2). The reactive DC magnetron sputtering processes were finely monitored and controlled by the target voltages. The growth model and material properties were systematically investigated. The electrochromic properties for NiOX thin films and corresponding ATF-ECDs were studied as well. The optimal ATF-ECD (SLG/ITO/NiOX/Ta2O5/WO3/ITO) was achieved with a NiOX ion storage layer reactively sputtered at a FO2 of 15 sccm. The electrochromic mechanisms was discussed in details.
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