Abstract
The growth of indium on the 7 × 7 reconstructed (111) surface of silicon has been studied as a function of substrate temperature by X-ray reflectivity and Auger electron spectroscopy. A correlation is seen between features in the X-ray reflectivity curves and breaks in the Auger signal versus time plot. The oscillation of the X-ray signal indicates that below 400°C two consecutive pseudomorphic indium layers are formed before three-dimensional islanding occurs. Kinematic analysis predicts the shape of the X-ray signal versus time curve and yields the perpendicular displacement of the indium layers from the substrate. It is proposed that the first layer of indium atoms are bonded vertically above the top most layer of silicon atoms in T 1 sites.
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