Abstract
Bulk single crystals of Ga x In 1− x P y As 1− y were grown from the melt via the gradient freeze technique in the composition range 0 ⩽ x ⩽ 0.07, 0 < y ⩽ 0.80. The crystals have nominally undoped a net electron concentration of 8 × 10 15 ⩽ N D − N A ⩽ 4 × 10 16 cm -3 corresponding to electron mobilities 1600 ⩽ μ e ⩽ 2500 cm 2V -1s -1 at room temperature. P-type crystals with net acceptor concentrations 3 × 10 17 < N A − N D <3 × 10 18 cm -3 and 17 < μ h K 55 cm 2 V -1s -1 were grown from Zn doped melts. The dislocation density revealed by etch pits on the (111)-A face is typically ⪅10 6 cm 2. Photoluminescence peaks recorded at room temperature from different spots on a nominally undoped crystal were located at 1.24 ± 0.08 μm.
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