Abstract
ABSTRACTThe vertical Bridgman method, a gradient freeze technique, is feasible for the growth of high quality, large CdTe crystals. The equi-composition contour of Zn in doped crystals has been used to reveal the solid-liquid interface shape in the growth process. A slow cooling rate is necessary to obtain a convex interface shape. A low temperature gradient at the solid-liquid interface, down to 2 °C/cm, and Zn doping are found to be effective to reduce the etch pit density to 5×103/cm2 (minimum) to 104/cm2 (average). The crystallographic quality has been evaluated by means of X-ray diffraction, X-ray topography, etch pit delineation with the Nakagawa etchant, infrared measurements, photoluminescence and Hall effect measurements. CdTe crystals are found to be free from subgrain structure, Te precipitates and deep levels, and have high electron mobility.
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