Abstract
We conducted an investigation of line-shaped defects, extending in the 〈010〉 direction, in bulk β-Ga2O3 single crystals grown by the vertical Bridgman (VB) method. Parallelepiped cross-section samples with {010} polished surfaces and {100} cleavage planes were prepared and were then etched in phosphoric acid at 140 °C. Rhombic etch pits were observed on the (010) surface and they were similar in shape to those reported as nanometer-sized grooves or plate-like nanopipes in crystals grown by the edge-defined film-fed growth (EFG) method. Groove-like voids in the 〈010〉 direction were also observed on {100} cleavage planes below the etch pits observed on the {010} surface. Therefore, we concluded that line-shaped defects observed in VB-grown crystals are similar to defects observed in EFG-grown crystals. The size of these defects was considerably smaller than that observed in EFG-grown crystals, but with a density of 5 × 105 cm−2. Based on these results, possible formation mechanisms for such defects were discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
