Abstract
Using As2 as an arsenic source together with other appropriate growth and annealing procedures, we have improved the electrical and magnetic properties of GaMnAs films and obtained Curie temperatures as high as 159 K. For Mn concentrations up to 7%, we have demonstrated that the compensation previously observed in such films is mainly due to Mn interstitials, which can be removed by using appropriate annealing procedures for thin films. For the Mn concentrations >7%, we suggest that additional AsGa defects also cause compensation, which cannot be removed by our present annealing procedure.
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