Abstract
A coaxially arranged CVD reactor has proved versatile in the epitaxial growth of several complex magnetic garnet films. Gallium substituted gadolinium yttrium iron garnet (Ga‐GdYIG) and gallium substituted yttrium iron garnet (Ga‐YIG) have been grown on gadolinium gallium garnet (GGG) and dysprosium gadolinium gallium garnet (DyGGG) substrates, respectively. Features in the reactor design pertinent to the growth of good quality complex garnet films as well as deposition conditions are presented. Among these are precise control of reactant and carrier gas flow, provision for well‐mixed reactant gases at the substrate surface, and the suitable presentation of the substrate to the CVD reactants.
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