Abstract
High quality MWIR and LWIR linear photodiode arrays of greater than 100 elements have been fabricated by mercury diffusion in MOCVD grown (111)CMT/GaAs and (100)CMT/GaAs. The (100)CMT layers were grown on a variety of buffers, whilst CdTe was used for (111)CMT growth. Optimisation of the growth conditions led to the (100) layers being p-type as grown, with FWHMs as low as 80 arc sec. The detector geometry was a linear array of 100×60 or 30×30 μm2 optical areas. State-of-the-art diode results have been obtained in both (100)CMT and (111)CMT, at MWIR and LWIR. A 120 element array of 11.4–12.7 μm cut-off photodiodes had typical 77 K R0A's of 2–10 ω cm2 and detectivities of about 1×1011 cm Hz1/2 W-1. MWIR yields were typically 90% for (111) and 95% for the hillock free regions of the (100)CMT. LWIR yields of 95% have been obtained for (100)CMT.
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