The growth of an AlGaN/GaN modulation-doped heterostructure by NH 3 source molecular beam epitaxy

Abstract

Using NH 3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (MD) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (MBE) system. Though the Al composition is as low as 0.036, as deduced from photoluminescence (PL) measurements, the AlGaN barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The 2DEG characteristics are verified by the variable temperature Hall measurements down to 7 K. Using a parallel conduction model, we estimate the actual mobility of the 2DEG to be 1100 cm 2/V s as the sheet carrier density to be 1.0×10 12 cm −2. Our results show that the AlGaN/GaN system is very suitable for the fabrication of high electron mobility transistors (HEMTs).