Abstract
A new type of optoelectronic semiconductor device which utilizes the modulation-doped (MOD) heterostructure is demonstrated. The device operates not only as a lateral current injection (LCI) laser but also as a junction field-effect transistor (JFET) based on the MOD heterostructure. This first demonstration of the structural compatibility of the LCI laser with the MODFET is one step toward optoelectronic integration utilizing a common two-dimensional electron gas. >
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