Abstract
The growth defects in Yb : YAG crystals were investigated by transmission synchrotron topography and chemical etching. The etch pit patterns on three low-index planes (1 1 1), (1 1 0) and (2 1 1) were obtained. It was found that growth striations, core and dislocations were the main defects in Yb : YAG crystal. The dislocations in Yb : YAG mainly originated from seed, impurity particles and inclusions, and seed–crystal interfaces in the initial growth period. The dislocations usually propagate along a path perpendicular to the growth interface. Therefore, in Yb : YAG crystals grown with a convex solid–liquid interface, the dislocations will be decreased or eliminated.
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