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Abstract
SiC and Si heteroepitaxial films were sequentially deposited on Si substrates to form Si/SiC/Si multilayer structures using a refined rapid thermal chemical vapor deposition (RTCVD) technology. Refined RTCVD is a combination of a graded composition process with rapid thermal chemical vapor deposition. The optimum growth conditions and characteristics of the as-grown films in the Si/SiC/Si multilayers were studied by structrual (X-ray, TEM) and electrical (four-point probe , Hall measurement) methods. N-Si/n-SiC/p-Si double-heterojunction diodes (DHD) were fabricated to determine the suitability of the multilayer films for device applications. Analysis of the I–V characteristics of the diode indicates that fine control of the thickness of the graded layers without degrading the crystallinity of the films results in high-quality heteroepitaxial SiC and Si films which are suitable for multilayer device applications.
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