The GMR effect of Cu/Co multilayer on Si(1 0 0)

Abstract

(Cu/Co) 10 was deposited on SiO 2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO 2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R– H loop was higher than that in major R– H loop. This could be due to the increment of domain wall which enhances the electrons scattering.