The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

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The generation process of interface traps by hot-carrier injection in nanoscale metal–oxide–semiconductor field-effect transistors (MOSFETs) was evaluated by the charge pumping (CP) method, and degradation of the threshold voltage by these interface traps was studied. The generation process is found to follow the conventional ΔIcp∼tn relationship for a short period of stress and then shows a saturation behavior after longer stress times. The factors that determine the interface trap generation before and after saturation are analyzed. A new equation to describe the generation process is given.