Abstract
The semiconductor industry growth is driven to a large extent by steady advancements in microlithography. The SIA Lithography Roadmap forecasts the continuing advancements necessary to maintain this steady growth and “work-in-progress” predicts accelerating requirements. According to the newly updated Roadmap, the 130 nm generation is anticipated to be available in the year 2003, however the path to get there is no tobvious. It is still up to the semiconductor industries to make a decision on which advanced lithography technique they will employ. To meet the needs of its members, SEMATECH embarked on a program to explore and narrow the technology options on the Roadmap. With a potential end to traditional optical lithography, the choice among Extreme Ultraviolet (EUV or soft X-ray), ion beam, projection e-beam, proximity X-ray, or alternative reflective technologies is not obvious nor guaranteed for success in the time required. The goal to make a data-driven decision by late 1997 is predicated by the apparent lack of resources needed to pursue multiple technology paths.
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