The fundamental absorption of amorphous Ge, Si and GeSi alloys

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We present the results of reflectivity, transmission, and ellipsometry measurements of the absorption edge and the fundamental absorption region of amorphous Ge, Si and GeSi alloys. Both the absorption edge and fundamental absorption band shift smoothly from those of Ge to those of Si as the Si concentration increases, in a fashion similar to that of the crystalline alloys. The compositional disorder does not produce any additional energy broadening.