Abstract
Abstract Field effect and some other properties of semiconductor thin films deposited on different ferroelectric substrates under the influence of repolarizing field, light and temperature are described. The relationship between the state of ferroelectric substrate and photo/temperature-electrical properties of semiconductor films has been investigated. Resistor and capacitor types of ferroelectric-semiconductor structure are presented. On the basis of the above mentioned physical criteria a conclusion is made, that it is possible to use such structures as controlled semiconductor resistors and photoresistors with memory, temperature sensitive resistors with the controlled temperature resistance coefficient.
Published Version
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