Abstract
This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental data and the 2D simulation results, with a lower n-LDD doping density, the fringing electric field effect in the sidewall oxide spacer lowers the short-channel effect.
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