The friction and wear of ion-implanted ceramics: the role of adhesion: S J Bull and T F Page,Nucl Instrum Meth Phys Res,B32, 1988, 91–95

Abstract

Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), and reflection high-energy electron diffraction (RHEED) were used to investigate the adsorption, surface dissociation, and thermal desorption of Si2H6 on Ge(001)2 × 1. At room temperature, EELS results show that Si2H6 is dissociatively adsorbed onto Ge dangling bonds and further decomposes to yield a disordered overlayer consisting of SiH2, GeH, and undissociated SiH3. A saturated coverage of approximately 0.5 monolayers is obtained with Si2H6 exposures greater than or equal to 1 × 1015 cm-2. RHEED results indicate that, in contrast to Si2H6-saturated Si(001), the saturated Ge(001) surface still exhibits a significant fraction of dimerized bonds. H2 desorption from the silicon dihydride phase occurs during 1 min anneals at Ta > 150°C while hydrogen desorption from the silicon monohydride phase and Ge surface segregation both occur at significant rates at Ta ⩾ 350 °C. All hydrogen is desorbed by 450°C, compared with ⋍ 550°C for the saturated Si(001) surface.