Abstract
Due to the tensile strain in the GaN0.02As0.98 layer, photoreflectance features related to light hole (LH) and heavy hole (HH) transitions are well separated (∼31 meV) and can be precisely analyzed. A careful analysis of the experimental data has shown that at low temperatures both the LH and the HH transitions are composed of two resonances. The first is related to excitonic absorption and the second related to band‐to‐band absorption. The exciton binding energies, determined from the splitting of the two contributions, are ∼4.7 meV and ∼6.2 meV for LH and HH excitons, respectively.
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