The formation of well-oriented dense ZnO film using MOCVD

Abstract

For utilization of ZnO in optoelectronics, the large-area heteroepitaxy of ZnO is needed. However the lattice mismatch and anisotropy of ZnO prevent the successful heteroepitaxy of ZnO film through the conventional slow growth approach. This paper demonstrates an unconventional approach of dense ZnO film formation by high growth rate deposition using metal-organic chemical vapor deposition. The mechanism of the formation of well-oriented and dense ZnO film with large grains is illustrated in terms of dimethylzinc flow rate, oxygen flow rate, and VI/II ratio.