Abstract
AbstractPolycrystalline ZnO thin films with a preferred orientation were successfully grown by metal organic chemical vapor deposition at temperatures ≤300 °C. By injecting additional Ar gas through a by‐pass line, good quality ZnO films were grown at low temperature. The ZnO films grown at substrate temperatures <200 °C showed a porous microstructure whereas a dense undoped ZnO film showing a high conductivity and no Zn phases was grown at 210 °C. The ZnO film grown at low temperatures by MOCVD showed improved emission properties compared with the films grown by sputtering. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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