Abstract
In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B1, B2, D1, D2 and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were , and , respectively. On the other hand, the surfaces of B1, B2, D1 and D2-facets were not smooth, with some ambiguous stripes, which were investigated by using “zigzag triangle” hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets.
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