Abstract
Si-doped nonpolar a -plane GaN films were grown on nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a -plane (110) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/μm at a current density of 0.63 μA/cm2, and a high field emission current density of 74 mA/cm2 at an applied field of 24 V/μm. Moreover, the Fowler–Nordheim plot of the sample fits a near linear relation. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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