Abstract
The orthorhombic (O) phase formation process of Hf0.5Zr0.5O2 (HZO) thin films on Ga2O3 substrate is demonstrated. As deposited HZO thin film has the O and tetragonal (T) phases together with an amorphous phase and post-metallization annealing suppresses the crystallization into the T phase and promotes the O phase compared to annealing without a top electrode. Positive-up-negative-down measurement reveals that remanent polarization for the downwards (accumulation side) only originates from the ferroelectricity in HZO films on Ga2O3 substrate. Using normal capacitance–voltage (C–V) measurements, a clear capacitance change from accumulation to depletion was observed. However, the C–V results also show clockwise hysteresis by charge injection from the semiconductor. High-speed C–V measurements at a voltage sweep frequency above 3 Hz show counterclockwise hysteresis, and hysteresis width saturates as the applied voltage increases. Based on these results, HZO thin films with O phase on Ga2O3 substrates have ferroelectricity.
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