Abstract
The ubiquitous use of ion implantation and the simultaneous interest in the emplacement of selected impurities in the matrix of choice bring added emphasis to the need for a quantitative understanding of the residence sites adopted by such imputities. The time-dependent perturbed angular distribution technique has been used to study the case of fluorine implanted in diamond. Careful examination is presented of the dependence of the perturbation parameters on the characteristics of the implant sites. These comprehensive investigations reveal the power of the technique in the richness of detail exposed and make possible the theoretical modelling of the data.
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