Abstract
In this work, NiPtSi multilayer films were deposited on Si wafer by magnetron sputtering method. The forward voltage (VF) and reverse leakage current (IR) of NiPtSi multilayer films were tested. It was found that VF and IR in some area of the wafer were abnormal as compared with others. Both kinds of multilayer films were examined by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDAX). And the reason for abnormal electrical properties were discussed based on the microstructure observation.
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