Abstract
In this work, NiPtSi multilayer films were deposited on Si wafer by magnetron sputtering method. The forward voltage (VF) and reverse leakage current (IR) of NiPtSi multilayer films were tested. It was found that VF and IR in some area of the wafer were abnormal as compared with others. Both kinds of multilayer films were examined by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDAX). And the reason for abnormal electrical properties were discussed based on the microstructure observation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
