Abstract
The paper presents the results on fabrication technique of a 1,55 μm wafer-fused vertical-cavity surface-emitting lasers (VCSELs) based on the InAlGaAsP/InP optical cavity and AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by solid-source molecular beam epitaxy. The optical cavity InAlGaAsP/InP containes an active region based on multiple InGaAs quantum wells, n++/p++-In (Al)GaAs buried tunnel junction (BTJ), InGaAsP intracavity contact layers and n-InP spreading layers. The top and bottom AlGaAs/GaAs DBRs were grown on GaAs substrate, while the optical cavity InAlGaAsP/InP was grown on InP substrate. The main fabrication proceseses of 1,55 μm VCSELs such as: BTJ fabrication, dry etching of first mesa on top DBR, wet etching of second VCSEL mesa, forming of the ohmic contacts and passivation of the VCSEL structure were described in details.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
