Abstract

Free-standing microstructures such as resistors, superconductors and cantilever beams are made on Si substrates using the anisotropic etchant KOH+H2O. Resistant masks of Si3N4 or Nb are patterned by dry etching and then become partially suspended during the liquid etch process. Promising device structures include resistors suspended from each end for low mass sensors, and a long beam which is deflected electrostatically to control the size of, or to close, a gap.

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