Abstract
Free-standing microstructures, including beams that are deflected electrostatically to control the size of submicron gaps, are made by micromachining (100) silicon substrates. Electron beam lithography and dry etching are used to pattern a resistant silicon nitride mask or a bilayer of tungsten and silicon nitride. This becomes partially suspended during the subsequent anisotropic wet etch of the silicon to form a beam supported at both ends. The central portion of a 180 mu m-long beam is deflected 0.4 mu m when about 17 V is applied to the fixed bank. This closes a gap to produce a tunnel junction at a tip protruding from one part of the bank. A similar fabrication process using a single lithographic step is used to produce an array of tips with a self-aligned grid for possible application in vacuum microelectronics.
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