Abstract
Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial Ge x Si 1− x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.
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