Abstract
The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance-voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−8</sup> A at 4V bias, and the average capacitance is 82.66pF at 0–5V voltage range. The spectral response range is from 250nm to 350nm wavelength, and the highest responsivity appears at the wavelength of 280nm. The results indicate that the 4H-SiC photodetectors are visible-blind.
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