Abstract
ZnO films were deposited on GaAs substrates by radio frequency (rf) magnetron sputtering followed by an ambient-controlled heat treatment process for arsenic doping. In Hall measurements, the As-doped ZnO films showed the characteristics of p-type semiconductor. The ZnO thin film p–n homojuctions were then fabricated to investigate the electrical properties of the films. The p–n homojunctions exhibited the distinct rectifying current–voltage ( I– V) characteristics. The turn-on voltage was measured to be ~3.0 V under the forward bias. When ultraviolet (UV) light (λ = 325 nm) was irradiated on the p–n homojunction, photocurrent of ~2 mA was detected. Based on these results, it is proposed that the p–n homojunction herein is a potential candidate for UV photodetector and optical devices.
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