Abstract
Using vacuum evaporation and magnetron sputtering, we have fabricated a photoelectric transistor with the vertical structure of Cu / CuPc / Al / CuPc / ITO. Excitons will be generated after the optical signal irradiation in semiconductor material, then transform into photocurrent under the built-in electic field by the Schottky contact, as the organic transistor drive current, makes the output current multiplication. The results show that the I-V characteristics of transistor is unsaturated. When Vec=3 V, the ratio of white light and dark current is in the range of 2.9-6.4. The photocurrent IL=0.122 μA in white light, which is the 2.227 times of base current. The optical magnification of the device is 98.65.
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