Abstract
The sub-micrometer vertical type current channel of semi-conductive Al gate organic semiconductor copper phthalocyanine thin film transistor (VOTFT) with five layered structure of Au (Drain)/CuPc/Al(Gate)/CuPc/Au (Source) is fabricated by vacuum evaporation technique with organic semiconductor copper phthalocyanine (CuPc). As the thickness of semi-conductive Al thin film is approximately 20nm, the carriers emitted from source electrode tunnel through CuPc/Al/CuPc double schottky barrier and formed the operating current of thin film transistors. The result shows that VOTFT have the characteristics of the unsaturated voltage and current similar with the bipolar mode static induction transistor, strong gate voltage capacity and high current density, operating current density can be achieved to 0.0972A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . The dynamic small signal responsive frequency can be achieved to ~1000Hz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
