The fabrication and characteristics of (Ba 0.5Sr 0.5)TiO 3 thin films prepared by pulsed laser deposition

Abstract

The fabrication and characteristics of (Ba 0.5Sr 0.5)TiO 3 (BST) thin films prepared by sputtering (Ba 0.5Sr 0.5)TiO 3 targets were investigated. The laser-deposited BST films were grown on Si (1 0 0) substrates at 700°C under an oxygen pressure of 0.1 Pa. The capacitance–voltage behavior of metal–insulator–metal structures and their leakage current characteristics were studied. The results showed that the dielectric constant of 40 nm thick BST films was 150, and the dissipation factor was 0.035 at 1 MHz. The leakage current density was 2×10 −9 A/cm 2 at 2 V. The high dielectric constant, low dielectric loss, and low leakage current show the potential of (Ba 0.5Sr 0.5)TiO 3 thin films for integrated capacitors and high-density dynamic random access memories.