(Ta 2 O 5 ) 0.92 (TiO 2 ) 0.08 thin films prepared by pulsed laser deposition

Abstract

ABSTRACT (Ta205)0 92208 thin films have been deposited on Si substrate by 248 nm pulsed laser deposition in °2 gas environment.The structure and properties of (Ta205)0 92208 polycrystalline thin film were investigated as a function of the depositiontemperature, oxygen pressure and the substrate-target distance. The film with the thickness of I 90 nm showed a dielectric constant r 56. Keywords: (Ta205)0 9208 thin film, pulsed laser deposition, substrate temperature, dielectric constant. 1. INTRODUCTION Microelectronics focuses on smaller components with enhanced performances, which led to an intensive study of highdielectric constant materials to propose an alternative to the conventional insulators currently employed nowadays in microelectronics, i.e., silicon dioxide, silicon nitride. Therefore materials such as barium strontium titanate and Ta205 are under investigation in many laboratories, especially for high-density dynamic random access memory (DRAM)application'2. Ta205 is of special interest not only because of its high dielectric constant Cr