Abstract
The main component of the POM flash memories is a polyoxometalates (POMs) layer which is used as the floating gate. As a competitive candidate of NAND Flash, POM flash memories attract significant interest and intensive investigations which have been conducted on modelling its physical characteristics and electrical properties. In this paper, we report the development of a specific compact model extraction strategy for POM flash memory based on BSIM4 compact model, allowing the corresponding circuit performance investigation. POM flash compact models are extracted and optimized using genetic algorithm (GA) at the three POM flash redox states. The extracted models are in good agreement with both high drain and low drain bias TCAD simulations. For the first time, the extracted compact models are applied in the circuit simulation to investigate the circuit behaviour of POM flash cells. This will provide valuable guidance for the practical design using POM flash cells.
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