Abstract
The influence of rapid thermal annealing on the photoluminescence (PL) properties of oxidized amorphous silicon nitride (a-SiN : O) films fabricated at a low temperature was investigated. The PL intensity from the annealed samples is found to be significantly enhanced by the RTA treatment when the temperature increases from 400 to 900 °C, while the PL peak position is shown to gradually move from the green to the red region. By combining the PL red-shift with the analysis of the film structure evolution, the origin of the red-shifted PL is suggested to be from a-Si nanoparticles, while the enhanced PL intensity is attributed to the increase in the a-Si nanoparticle density in the a-SiN : O films where the quantum confinement effect plays an important role. The present results strongly indicate that the RTA treatment is an effective way of fabricating tunable high-efficiency light-emitting devices.
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